Filter device, multiplexer, radio-frequency front end circuit, and communication device

ABSTRACT

A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese PatentApplication No. 2016-213788 filed on Oct. 31, 2016 and Japanese PatentApplication No. 2017-165902 filed on Aug. 30, 2017. The entire contentsof these applications are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a filter device including resonators,and to a multiplexer, a radio-frequency front end circuit, and acommunication device.

2. Description of the Related Art

A ladder filter using acoustic wave resonators has been proposed. Forexample, a filter device including two series arm resonators, threeparallel arm resonators, and an inductor arranged in a state bridgingthe two series arm resonators is disclosed (see, e.g., Japanese PatentNo. 5088416). In the disclosed filter device, a low pass filter (LCresonant circuit) is defined by the inductor and the two series armresonators. Furthermore, resonant frequencies of the two series armresonators or the three parallel arm resonators are located in anattenuation band of the low pass filter. Thus, attenuationcharacteristics are able to be improved by setting sharp attenuationpoles, which are obtained by the resonators, to be overlapped with theattenuation band of the low pass filter.

However, the above-described configuration of the related art has aproblem that a loss of a pass band increases because the attenuationpole of the low pass filter (LC resonance circuit) is overlapped withthe sharp attenuation poles obtained by the resonators.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide filter devices,multiplexers, radio-frequency front end circuits, and communicationdevices in which filter characteristics with a smaller loss areachieved.

According to a preferred embodiment of the present invention, a filterdevice includes a first series arm resonator and a second series armresonator electrically connected in series between a first terminal anda second terminal, the first series arm resonator being located on aside closer to the first terminal, the second series arm resonator beinglocated on a side closer to the second terminal, a parallel armresonator electrically connected between a ground and a series armbetween the first series arm resonator and the second series armresonator, a first inductor electrically connected in parallel to thefirst series arm resonator and the second series arm resonator, and amatching circuit electrically connected between the second series armresonator and the second terminal or between the first series armresonator and the first terminal, wherein the first series armresonator, the second series arm resonator, and the parallel armresonator define a pass band of a bandpass filter, the first series armresonator, the second series arm resonator, and the first inductordefine an LC resonant circuit, respective anti-resonant frequencies ofeach of the first series arm resonator and the second series armresonator and a resonant frequency of the parallel arm resonator arelocated in a pass band of the LC resonant circuit, and a resonantfrequency of the LC resonant circuit is lower than the resonantfrequency of the parallel arm resonator.

According to the filter device described above, the two series armresonators and the first inductor define an LC resonant circuit with awide pass band. Furthermore, the respective anti-resonant frequencies ofeach of the first series arm resonator and the second series armresonator and the resonant frequency of the parallel arm resonator arelocated in the pass band of the LC resonant circuit. The first seriesarm resonator, the second series arm resonator, and the parallel armresonator operate as notch filters in order to locally attenuate thepass band of the LC resonant circuit. Since the respective anti-resonantfrequencies of each of the two series arm resonators are higher than theresonant frequency of the parallel arm resonator, the parallel armresonator provides an attenuation slope on a lower frequency side of thepass band of the filter device, and the two series arm resonatorsprovide an attenuation slope on a higher frequency side of the pass bandof the filter device. Accordingly, the pass band of the filter device isable to be widened by setting the respective anti-resonant frequenciesof each of the two series arm resonators and the resonant frequency ofthe parallel arm resonator to be located farther away from each other.Moreover, a loss in the pass band of the filter device is able to besignificantly reduced by adjusting the matching circuit. As a result,bandpass-type filter characteristics of a wide pass band and a smallerloss are able to be provided.

The resonant frequency of the parallel arm resonator may be lower thanthe respective anti-resonant frequencies of each of the first series armresonator and the second series arm resonator, for example.

The matching circuit may be a second inductor electrically connectedbetween the ground and a junction between the first terminal and thesecond terminal, for example.

Thus, a matching circuit is able to define and function as a filter thatattenuates a low band (about 699 MHz to about 960 MHz), for example.

The matching circuit may be a third inductor electrically connected inseries between the first terminal and the second terminal, for example.

Thus, a matching circuit is able to define and function as a filter thatattenuates a frequency band of about 5 GHz, for example.

Each of the parallel arm resonator, the first series arm resonator, andthe second series arm resonator may include a substrate including apiezoelectric layer, and an IDT electrode provided on the substrate, anda piezoelectric material of the piezoelectric layer included in theparallel arm resonator is different from a piezoelectric material ofeach of the piezoelectric layers included in the first series armresonator and the second series arm resonator, for example.

When the above piezoelectric materials are the same or similar, forexample, an unwanted wave (bulk wave) may be generated due to thematerials and a loss in the passband may be increased. However, the lossis able to be significantly reduced because the piezoelectric materialsare different.

Each of the parallel arm resonator, the first series arm resonator, andthe second series arm resonator may include a substrate including apiezoelectric layer, and an IDT electrode provided on the substrate, anda cut angle of the piezoelectric layer included in the parallel armresonator may be different from a cut angle of each of the piezoelectriclayers included in the first series arm resonator and the second seriesarm resonator, for example.

When the above cut angles are the same or similar, for example, anunwanted wave (bulk wave) may be generated due to the cut angles and aloss in the passband may be increased. However, the loss is able to besignificantly reduced because the cut angles are different.

At least one of the parallel arm resonator, the first series armresonator, and the second series arm resonator may be defined by a BAW(Bulk Acoustic Wave) resonator or an FBAR (Film Bulk AcousticResonator), for example.

According to a preferred embodiment of the present invention, amultiplexer includes a plurality of filters that include, as at leastone among the plurality of filters, the filter device described above,wherein input terminals or output terminals of the plurality of filtersare directly or indirectly electrically connected to a common terminal.

With the above features, a multiplexer with filter characteristics witha smaller loss is able to be provided.

The plurality of filters may be two filters, for example.

Thus, a diplexer with filter characteristics with a smaller loss is ableto be provided.

The plurality of filters may be three filters, for example.

Thus, a triplexer with filter characteristics with a smaller loss isable to be provided.

The plurality of filters may be four filters, for example.

Thus, a quadplexer with filter characteristics with a smaller loss isable to be provided.

The plurality of filters may include a filter other than the filterdevice, the other filter being electrically connected to the firstterminal and including different frequencies of the pass band of thebandpass filter, and the resonant frequency of the LC resonant circuitmay be located in the pass band of the other filter, for example.

With the above features, a degradation of bandpass characteristics ofthe other filter is able to be significantly reduced or prevented.

The resonant frequency of the LC resonant circuit may be located on thelower frequency side than a center frequency of the pass band of theother filter, for example.

Thus, since the resonant frequency of the LC resonant circuit is locatedon the lower frequency side than the center frequency of the pass bandof the other filter, an attenuation pole provided by the LC resonantcircuit is located farther away from the pass band of the filter device.Accordingly, the pass band of the filter device receives a lessinfluence from the attenuation pole provided by the LC resonant circuit,and an increase of loss on the lower frequency side of the pass band ofthe filter device is able to be significantly reduced or prevented.

The pass band of the filter device may be assigned to a high band ofabout 2300 MHz to about 2690 MHz, and the pass band of the other filtermay be assigned to a middle band of about 1710 MHz to about 2200 MHz,for example.

With the above features, filter characteristics with a smaller loss areable to be provided over the high band of about 2300 MHz to about 2690MHz. Furthermore, a loss in the middle band of about 1710 MHz to about2200 MHz corresponding to the other filter is able to be significantlyreduced.

The plurality of filters may include a low-band filter, for example.More specifically, a pass band of the low-band filter may be assigned toa low band of about 699 MHz to about 960 MHz, for example. Even morespecifically, the low-band filter may be an LC filter, for example.

With the above features, a loss in the low band of about 699 MHz toabout 960 MHz corresponding to the low-band filter is able to besignificantly reduced.

The multiplexer may transmit and receive signals in a plurality offrequency bands corresponding to the plurality of filters at the same orsubstantially the same time, for example.

Thus, the multiplexer is able to be provided for carrier aggregation(CA).

According to a preferred embodiment of the present invention, a highfrequency front-end circuit includes the above-described multiplexer,and a switch electrically connected to the multiplexer.

Thus, a high frequency front-end circuit including the switch andproviding filter characteristics with a smaller loss is able to beprovided.

According to a preferred embodiment of the present invention, a highfrequency front-end circuit includes the above-described multiplexer,and an amplifier circuit electrically connected to the multiplexer.

Thus, a high frequency front-end circuit including the amplifier circuitand providing filter characteristics with a smaller loss is able to beprovided.

According to a preferred embodiment of the present invention, acommunication device includes an RF signal processing circuit thatprocesses high frequency signals transmitted from and received by anantenna element, and the above-described high frequency front-endcircuit that transfers the high frequency signals between the antennaelement and the RF signal processing circuit.

Thus, a communication device with filter characteristics with a smallerloss is able to be provided.

With the filter devices, the multiplexers, the radio-frequency front endcircuits, and the communication devices according to the preferredembodiments of the present invention, filter characteristics with asmaller loss are able to be provided.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a filter according to a first preferredembodiment of the present invention.

FIG. 2 schematically shows a structure of a resonator according to thefirst preferred embodiment of the present invention.

FIG. 3 is a graph showing filter characteristics of a bandpass filteraccording to the first preferred embodiment of the present invention.

FIG. 4 is a graph showing filter characteristics of a filter accordingto the first preferred embodiment of the present invention.

FIG. 5 is a circuit diagram of a filter according to Comparative Example1.

FIG. 6 is a graph showing respective filter characteristics of thefilter according to the first preferred embodiment of the presentinvention and the filter according to Comparative Example 1.

FIG. 7 is a graph showing respective third-order intermodulationdistortion (IMD3) characteristics of the filter according to the firstpreferred embodiment of the present invention and the filter accordingto Comparative Example 1.

FIG. 8A is a circuit diagram showing an example of a matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8B is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8C is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8D is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8E is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8F is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8G is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8H is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 8I is a circuit diagram showing an example of the matching circuitaccording to the first preferred embodiment of the present invention.

FIG. 9 is a graph showing respective filter characteristics of a filteraccording to Example 1 and a filter according to Comparative Example 2.

FIG. 10 is a graph showing respective resonator characteristics of aparallel arm resonator according to Example 1 and a parallel armresonator according to Comparative Example 2.

FIG. 11 is a block diagram of a multiplexer according to a secondpreferred embodiment of the present invention and a peripheral circuitthereof.

FIG. 12A is a graph showing bandpass characteristics of a signal pathcorresponding to a high band in the multiplexer according to the secondpreferred embodiment of the present invention.

FIG. 12B is a graph showing bandpass characteristics of the signal pathcorresponding to a middle band in the multiplexer according to thesecond preferred embodiment of the present invention.

FIG. 12C is a graph showing bandpass characteristics of the signal pathcorresponding to a low band in the multiplexer according to the secondpreferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described indetail below with reference to Examples and drawings. It is to be notedthat any of the following preferred embodiments represents a general orspecific example. Thus, numerical values, shapes, materials, elements,arrangements and electrical connections of the elements, etc., which aredescribed in the following preferred embodiments, are merelyillustrative. In the drawings, substantially the same or similarelements are denoted by the same reference sings, and duplicatedescription of those elements is omitted or simplified in some cases.

First Preferred Embodiment

FIG. 1 is a circuit diagram of a filter 10 according to a firstpreferred embodiment of the present invention.

The filter 10 is a filter device that is arranged, for example, in afront end portion of a multi-mode/multi-band cellular phone. The filter10 is, for example, a bandpass filter that is included in a multi-bandcellular phone with respect to communication standards, such as LTE(Long Term Evolution), to filter to pass a radio frequency signal in apredetermined band therethrough.

As shown in FIG. 1, the filter 10 includes a series arm resonator s1 (afirst series arm resonator), a series arm resonator s2 (a second seriesarm resonator), a parallel arm resonator p1, an inductor L1, and amatching circuit 14.

The series arm resonators s1 and s2 are electrically connected in seriesbetween an input/output terminal 11 m (a first terminal) and aninput/output terminal 11 n (a second terminal). In other words, theseries arm resonators s1 and s2 are resonators that are electricallyconnected in series between the input/output terminal 11 m and theinput/output terminal 11 n. As an example, the input/output terminal 11m is an input terminal to which a radio frequency signal is input, andthe input/output terminal 11 n is an output terminal from which a radiofrequency signal is output. The series arm resonator s1 is located on aside closer to the input/output terminal 11 m, and the series armresonator s2 is located on a side closer to the input/output terminal 11n.

The parallel arm resonator p1 is electrically connected between a ground(a reference terminal) and a series arm at a node x1 shown in FIG. 1that is located between the series arm resonator s1 and the series armresonator s2. In other words, the parallel arm resonator p1 is aresonator that is located in a parallel arm electrically connecting thenode x1 on the above-mentioned series arm and the ground.

In the following description, for the sake of convenience inexplanation, a singular point where an impedance of a resonator becomeslocally minimal (preferably, a point where the impedance becomes zero orsubstantially zero) is referred to as a “resonant point”, and afrequency at that singular point is referred to as a “resonantfrequency”. Furthermore, a singular point where a resonator impedancebecomes locally maximal (preferably, a point where the impedance becomesinfinite or substantially infinite) is referred to as an “anti-resonantpoint”, and a frequency at that singular point is referred to as an“anti-resonant frequency”.

The series arm resonators s1 and s2 and the parallel arm resonator p1are each an acoustic wave resonator with the resonant point or theanti-resonant point, for example, a SAW (Surface Acoustic Wave)resonator, a BAW (Bulk Acoustic Wave) resonator, or an FBAR (Film BulkAcoustic Resonator). Preferably, the series arm resonators s1 and s2 andthe parallel arm resonator p1 are each a surface acoustic waveresonator. In that case, the filter 10 is able to be implemented by anIDT (Inter-Digital Transducer) electrode that is provided on or in asubstrate that is piezoelectric. Therefore a small-sized and alow-height filter circuit with relatively sharp bandpass characteristicsis able to be provided. The substrate that is piezoelectric is asubstrate in which at least a surface thereof is piezoelectric. Such asubstrate may include, for example, a multilayer body including apiezoelectric thin film provided on or in a surface of the substrate, afilm with an acoustic velocity different from that of the piezoelectricthin film, a support base, etc. In another example, the above-mentionedsubstrate may include one of following multilayer bodies: a multilayerbody including a support base with a high acoustic velocity and apiezoelectric thin film provided on or in the support base with the highacoustic velocity; a multilayer body including a support base with ahigh acoustic velocity, a film with a low acoustic velocity and providedon the support base with the high acoustic velocity, and a piezoelectricthin film provided on the film with the low acoustic velocity; and amultilayer body including a support base, a film with a high acousticvelocity and provided on the support base, a film with a low acousticvelocity and provided on the film with the high acoustic velocity, and apiezoelectric thin film provided on the film with the low acousticvelocity. The substrate may be piezoelectric in its entirety, forexample.

It is to be noted that at least one of the series arm resonators s1 ands2 and the parallel arm resonator p1 may include a BAW resonator or anFBAR, for example.

The inductor L1 is a first inductor that is electrically connected inparallel to the series arm resonators s1 and s2. More specifically, theinductor L1 is electrically connected between a junction between theseries arm resonator s1 and the input/output terminal 11 m and ajunction between the series arm resonator s2 and the matching circuit 14described below.

The matching circuit 14 is electrically connected between the series armresonator s2 and the input/output terminal 11 n. Alternatively, thematching circuit 14 may be electrically connected between the series armresonator s1 and the input/output terminal 11 m, for example.

The series arm resonators s1 and s2 and the inductor L1 define an LCresonant circuit 12. More specifically, the LC resonant circuit 12 isdefined by respective capacitance components of the two series armresonators s1 and s2 and by the inductor L1.

Furthermore, the series arm resonators s1 and s2 and the parallel armresonator p1 define a pass band of a bandpass filter 13.

With respect to not only the resonator itself, but also the LC resonantcircuit 12, for the sake of convenience in explanation, a singular pointwhere a combined impedance of the resonator and the inductor becomeslocally minimal (preferably, a point where the combined impedancebecomes zero or substantially zero) is referred to as a “resonantpoint”, and a frequency at that singular point is referred to as a“resonant frequency” in the following description.

The series arm resonators s1 and s2 and the parallel arm resonator p1are separate chips. In other words, the series arm resonators s1 and s2are included in one chip, and the parallel arm resonator p1 is includedin another, separate chip. When there is a large difference between theresonant frequency of each of the series arm resonators s1 and s2 andthe resonant frequency of the parallel arm resonator p1, variations incharacteristics are able to be significantly reduced or prevented byproviding the series arm resonators s1 and s2 as a separate chip fromthe parallel arm resonator p1. Alternatively, the series arm resonatorss1 and s2 and the parallel arm resonator p1 may be all provided in onechip, for example.

A structure of each of the resonators included in the filter 10 isdescribed in detail below with respect to one of the resonators. Theother resonators also include substantially similar structures to thatof the resonator described below, and therefore detailed description ofthose structures is omitted.

FIG. 2 schematically shows the structure of the resonator in thispreferred embodiment, with (a) of FIG. 2 showing a plan view, and (b) ofFIG. 2 showing a sectional view taken along a line indicated in (a). Itis to be noted that the resonator shown in FIG. 2 is drawn with intentto explain a typical structure of each of the resonators included in thefilter 10. Therefore, the number and the length of electrode fingersincluded in the IDT electrode of each resonator in the filter 10 are notlimited to the number and the length of electrode fingers of the IDTelectrode shown in FIG. 2. Reflectors included in the resonator areomitted from FIG. 2 for clarity and convenience.

As shown in (a) and (b) of FIG. 2, the resonator includes an IDTelectrode 101, a piezoelectric substrate 102 on which the IDT electrode101 is provided, and a protective layer 103 covering the IDT electrode101.

As shown in (a) of FIG. 2, a pair of comb-shaped electrodes 101 a and101 b defining the IDT electrode 101 and opposing to each other areprovided on the piezoelectric substrate 102. The comb-shaped electrode101 a includes a plurality of electrode fingers 110 a parallel orsubstantially parallel to one another, and by a bus bar electrode 111 ainterconnecting the electrode fingers 110 a. The comb-shaped electrode101 b includes a plurality of electrode fingers 110 b parallel orsubstantially parallel to one another, and by a bus bar electrode 111 binterconnecting the electrode fingers 110 b. The electrode fingers 110 aand 110 b extend along a direction that is perpendicular orsubstantially perpendicular to a propagation direction of an acousticwave.

As shown in (b) of FIG. 2, the IDT electrode 101 defined by theelectrode fingers 110 a and 110 b and the bus bar electrodes 111 a and111 b includes a multilayer structure including a close contact layer101 g and a main electrode layer 101 h.

The protective layer 103 covers the comb-shaped electrodes 101 a and 101b. The protective layer 103 is a layer with aims of protecting the mainelectrode layer 101 h from external environments, adjustingfrequency-temperature characteristics, and increasing humidityresistance. The protective layer 103 is a film including, for example,silicon dioxide as a main component.

In the resonator (a surface acoustic wave resonator), a wavelength of anexcited acoustic wave is specified by design parameters of the IDTelectrode 101 and the like. In other words, the resonant frequency orthe anti-resonant frequency in the resonator is specified by the designparameters of the IDT electrode 101 and the like. The design parametersof the IDT electrode 101, including the design parameters of thecomb-shaped electrode 101 a and the comb-shaped electrode 101 b, aredescribed below.

The series arm resonators s1 and s2 and the parallel arm resonator p1may be each defined by a plurality of divided resonators that aredivided in series, for example. Accordingly, the size of each of theseries arm resonators s1 and s2 and the parallel arm resonator p1 isable to be increased. It is hence possible to significantly reduce powerconsumption in each of the series arm resonators s1 and s2 and theparallel arm resonator p1, and to significantly reduce or preventdistortion generated.

Filter characteristics of the filter 10 according to this preferredembodiment are described below.

First, filter characteristics of the bandpass filter 13 are described.

FIG. 3 is a graph showing the filter characteristics of the bandpassfilter 13 according to the first preferred embodiment. In FIGS. 3, 4, 6,9 and 12A to 12C, an insertion loss is larger on the lower side along avertical axis of each graph. FIG. 3 shows the filter characteristics ofthe band pass filter 13 in a state where the band pass filter 13 is notunder an influence of the inductor L1 (i.e., in a state not under aninfluence of the LC resonant circuit 12). The series arm resonators s1and s2 and the parallel arm resonator p1 operate as notch filters, andthe resonant frequency of the parallel arm resonator p1 is set to belower than the anti-resonant frequency of each of the series armresonators s1 and s2. As a result, the pass band of the bandpass filter13 is provided as shown in FIG. 3. In the shown filter characteristics,attenuation is relatively small in an attenuation band on the lower sidethan the pass band of the bandpass filter 13, and hence attenuationcharacteristics are not favorable. FIG. 4 shows bandpass characteristicsof the bandpass filter 13 in a state where the band pass filter 13 isunder the influence of the inductor L1 (i.e., bandpass characteristicsof the filter 10).

FIG. 4 is a graph showing the filter characteristics of the filter 10according to the first preferred embodiment. The respectiveanti-resonant frequencies of the two series arm resonators s1 and s2 andthe resonant frequency of the parallel arm resonator p1 are spaced awayfrom each other by adjusting the design parameters of the IDT electrodes101 of each of the series arm resonators s1 and s2 and the parallel armresonator p1. In a ladder filter, a bandpass is generally provided bysetting a resonant frequency of a series arm resonator and ananti-resonant frequency of a parallel arm resonator to the same orsubstantially the same frequency. In this preferred embodiment, however,the respective anti-resonant frequencies of the two series armresonators s1 and s2 are higher than the resonant frequency of theparallel arm resonator p1. More specifically, an attenuation poleindicated by a portion B in FIG. 4 (referred to as an attenuation poleB) corresponds to the resonant frequency of the parallel arm resonatorp1, an attenuation pole indicated by a portion C (referred to as anattenuation pole C) corresponds to the anti-resonant frequency of theseries arm resonator s1, and an attenuation pole indicated by a portionD (referred to as an attenuation pole D) corresponds to theanti-resonant frequency of the series arm resonator s2. The series armresonators s1 and s2 and the parallel arm resonator p1 operate as notchfilters. The attenuation pole B provides an attenuation slope on thelower frequency side of the pass band of the filter 10, and theattenuation poles C and D provide an attenuation slope on the higherfrequency side of the pass band of the filter 10. The pass band of theLC resonant circuit 12 includes a fractional bandwidth of about 4.5% ormore, for example, and spreads over frequencies corresponding to theattenuation poles B to D. In FIG. 4, the above-mentioned pass band islocally attenuated because the anti-resonant frequencies of the seriesarm resonators s1 and s2 and the resonant frequency of the parallel armresonator p1 are located in the above-mentioned pass band. Since theseries arm resonators s1 and s2 and the parallel arm resonator p1 areacoustic surface wave resonators, the attenuation slopes are relativelysharp. The filter 10 preferably is a bandpass filter with bandpasscharacteristics with a wide pass band defined by setting the attenuationpole B away from the attenuation poles C and D (for example, by settingthe resonant frequency of the parallel arm resonator p1 away from theanti-resonant frequencies of the two series arm resonators s1 and s2).The term “wide pass band” indicates a pass band that is wider than thatof a filter defined only by the acoustic wave resonator. The wide passband is, for example, a band with a fractional width of about 4.5% ormore and, preferably, a fractional width of about 7.5% or more.

The resonant frequency of the LC resonant circuit 12 is lower than thatof the parallel arm resonator p1. An attenuation pole indicated by aportion A in FIG. 4 (referred to as an attenuation pole A) correspondsto the resonant frequency of the LC resonant circuit 12. With thepresence of the attenuation pole A, an attenuation band range is able tobe made wider on the lower frequency side than the pass band of thefilter 10. The resonant frequency of the LC resonant circuit 12 is ableto be adjusted by adjusting an inductance value of the inductor L1, andthe attenuation pole given by the LC resonant circuit 12 is able to bespaced away from the pass band of the filter 10.

A branching filter that separates (e.g., branches) a radio frequencysignal per frequency band may be provided for carrier aggregation (CA),for example. A multiplexer including a plurality of filters is proposedas the above-mentioned branching filter. In such a multiplexer,terminals at respective one ends of individual filters are electricallyconnected together directly or via a phase shifter or a filter selectionswitch, thus providing a common terminal. This enables characteristicsof one filter to affect characteristics of another filter. Thus, thecharacteristics of one filter, which cause no problems on the one filteritself, may provide a factor degrading the characteristics of anotherfilter, for example. More specifically, attenuation characteristics inan attenuation band on the lower frequency side than the pass band ofone filter provide no influences on bandpass characteristics of the onefilter within the pass band thereof. However, when the frequency in theabove-mentioned attenuation band is located within the pass band ofanother filter, this provides a factor degrading bandpasscharacteristics of the other filter within the pass band thereof if theattenuation in the above-mentioned attenuation band of the one filter issmall.

As shown in FIG. 4, the filter 10 provides attenuation characteristicsin which an attenuation band is present, for example, in a middle band(about 1710 MHz to about 2200 MHz) located on the lower frequency sidethan the pass band of the filter 10. For example, if one filter of theabove-mentioned multiplexer is the filter 10 and another filter thereofis a filter with a pass band given by the above-mentioned middle band,if the attenuation in the attenuation band of the filter 10 is small,bandpass characteristics of the other filter may degrade in the passband thereof, for example. However, the attenuation in the attenuationband on the lower frequency side than the pass band of the filter 10 isincreased over a wide range with the presence of the attenuation pole Athat corresponds to the resonant frequency of the LC resonant circuit12. Accordingly, degradation in the bandpass characteristics of theother filter is able to be significantly reduced or prevented.

Characteristics of a bandpass filter with a wide pass band are also ableto be implemented with a filter including different features or elementsfrom the filter 10. As Comparative Example 1, a filter 100, which is abandpass filter with a wide pass band, is described below.

FIG. 5 is a circuit diagram of the filter 100 according to ComparativeExample 1. As shown in FIG. 5, the filter 100 includes ladder filters200 and 300 that are electrically connected in parallel to each other.The filter 200 includes series arm resonators s21 to s23 and parallelarm resonators p21 and p22, and the filter 300 includes series armresonators s31 to s33 and parallel arm resonators p31 and p32. Each ofthe series arm resonators s1 and s2 and the parallel arm resonator p1 isa surface acoustic wave resonator, for example.

FIG. 6 is a graph showing respective filter characteristics of thefilter 10 according to the first preferred embodiment and the filter 100according to Comparative Example 1. A solid line represents thecharacteristics of the filter 10, and a dotted line represents thecharacteristics of the filter 100. Generally, a filter in which surfaceacoustic wave resonators are included and in which a passband isprovided by setting a resonant frequency of a series arm resonator andan anti-resonant frequency of a parallel arm resonator to the same orsubstantially the same frequency, includes a fractional bandwidth ofabout 3% to about 4%, and a loss in the pass band is increased when abandwidth of the filter is widened. Thus, bandpass-type filtercharacteristics with a wide pass band are able to be provided byincluding a plurality of filters of which pass bands are different fromeach other, as in the filter 100. In an example, the filter 200 includesfilter characteristics with a pass band of Band 40 (about 2300 MHz toabout 2400 MHz), and the filter 300 includes filter characteristics witha pass band of Band 41 (about 2496 MHz to about 2690 MHz). The filtercharacteristics of the filter 100 are provided by combinedcharacteristics of both the filters 200 and 300. However, even when thebandpass-type filter characteristics with the wide pass band is providedby including the plurality of filters, a pass band with such a smallloss as provided with the filter 10 are not able to be provided, asshown in FIG. 6. It is also shown in FIG. 6 that, in the filter 100, alarge attenuation in the attenuation band is not provided over a widerange on the lower frequency side of the pass band.

Furthermore, in the filter 10 according to this preferred embodiment,the high frequency signal leaks to the inductor L1. In other words, thehigh frequency signal flowing through the series arm resonators s1 ands2 and the parallel arm resonator p1 is significantly reduced. As aresult, power consumption by the series arm resonators s1 and s2 and theparallel arm resonator p1 is significantly reduced, and generateddistortion is able to be significantly reduced or prevented.

FIG. 7 is a graph showing respective third-order intermodulationdistortion (IMD3) characteristics of the filter 10 according to thefirst preferred embodiment and the filter 100 according to ComparativeExample 1. In FIG. 7, the lower side of a vertical axis of the graphrepresents more favorable IMD3 characteristics. More specifically, FIG.7 shows the IMD3 characteristics in Band 7. In the filter 100,substantially all of the high frequency signal flows through theresonators unlike the filter 10, and hence power consumption by theresonators is increased. Thus, as shown in FIG. 7, the IMD3characteristics of the filter 10 are significantly improved incomparison with IMD3 characteristics of the filter 100.

As described above, the filter 10 provides the bandpass-type filtercharacteristics of the wide pass band and a smaller loss than thatgenerated in the filter 100 according to Comparative Example 1.

In addition, the attenuation in the predetermined band of the filter 10is able to be increased depending on the specific elements included inand the structure of the matching circuit 14, and bandpasscharacteristics of another filter that provides a pass band in the samerange or a similar range as the predetermined band of the filter 10 areable to be significantly improved.

FIGS. 8A to 8I are each a circuit diagram showing an example of thematching circuit 14.

As shown in FIG. 8A, the matching circuit 14 may be an inductor L2electrically connected between the ground and a junction between theinput/output terminal 11 m and the input/output terminal 11 n, forexample. The inductor L2 is an example of a second inductor. Byadjusting circuit parameters with the above-described features andelements, the matching circuit 14 is able to define and function as afilter that attenuates a low band (about 699 MHz to about 960 MHz), forexample. Accordingly, bandpass characteristics of another filter with apass band in the low band are able to be significantly improved.

As shown in FIG. 8B, the matching circuit 14 may be an inductor L3electrically connected in series between the input/output terminal 11 mand the input/output terminal 11 n, for example. The inductor L3 is anexample of a third inductor. By adjusting the circuit parameters withthe above-described features and elements, the matching circuit 14 isable to define and function as a filter that attenuates a frequency bandof about 5 GHz, for example. Accordingly, bandpass characteristics ofanother filter with a pass band in the frequency band of about 5 GHz areable to be significantly improved.

The matching circuit 14 may be a capacitor C1 electrically connectedbetween the ground and the junction between the input/output terminal 11m and the input/output terminal 11 n as shown in FIG. 8C, or a capacitorC2 electrically connected in series between the input/output terminal 11m and the input/output terminal 11 n as shown in FIG. 8D, for example.

The matching circuit 14 may include a 7L-type circuit with a capacitorC3 and inductors L4 and L5 as shown in FIG. 8E, or a T-type circuit witha capacitor C4 and inductors L6 and L7 as shown in FIG. 8F, for example.

The matching circuit 14 may include a series resonant circuit with acapacitor C5 and an inductor L8 as shown in FIG. 8G, or a parallelresonant circuit with a capacitor C6 and an inductor L9 as shown in FIG.8H, for example.

Moreover, the matching circuit 14 may include a circuit with a capacitorC7 and an inductor L10 as shown in FIG. 8I, for example.

Thus, the attenuation in the predetermined band of the filter 10 is ableto be increased, and bandpass characteristics of another filter with apass band in the same range or a similar range as the predetermined bandof the filter 10 are able to be significantly improved by providing thematching circuit 14 as shown in FIGS. 8C to 8I, and by adjusting thecircuit parameters.

Regarding the substrates including piezoelectric layers that areincluded in the series arm resonators s1 and s2 and the parallel armresonator p1, the following description is provided with respect torelationships between piezoelectric materials and cut angles of thepiezoelectric layers and the bandpass characteristics of the filter 10.

The series arm resonators s1 and s2 and the parallel arm resonator p1are each defined by the substrate including the piezoelectric layer, andby the IDT electrode provided on the substrate. A filter according toExample 1 in which respective piezoelectric materials of thepiezoelectric layers included in the series arm resonators s1 and s2 andthe parallel arm resonator p1 are different, and a filter according toComparative Example 2 in which the same or similar piezoelectricmaterials are included are described below. In Comparative Example 2, anLN Love wave is provided to each of the parallel arm resonator p1 andthe series arm resonators s1 and s2. In Example 1, an LN Rayleigh waveis provided to the parallel arm resonator p1, and an LN Love wave isprovided to each of the series arm resonators s1 and s2.

FIG. 9 is a graph showing respective filter characteristics of thefilter according to Example 1 and the filter according to ComparativeExample 2. In FIG. 9, a solid line represents the characteristics of thefilter according to Example 1, and a dotted line represents thecharacteristics of the filter according to Comparative Example 2. FIG.10 is a graph showing respective resonator characteristics of theparallel arm resonator p1 according to Example 1 and the parallel armresonator p1 according to Comparative Example 2. In FIG. 10, a solidline represents the resonator characteristics of the parallel armresonator p1 according to Example 1, and a dotted line represents theresonator characteristics of the parallel arm resonator p1 according toComparative Example 2. In FIG. 10, a return loss is smaller on the lowerside along a vertical axis of the graph.

In the case where the piezoelectric materials of the resonators are thesame as or similar to Comparative Example 2, an unwanted wave (e.g., abulk wave) is generated due to the piezoelectric materials and a loss inthe passband of the filter is increased in comparison with the casewhere the piezoelectric materials of the resonators are different as inExample 1. As shown by a region A in FIG. 9, for example, the loss isgreatly increased near about 2.69 GHz in the pass band. As shown by aregion A in FIG. 10, in Example 1, since the piezoelectric material ofthe parallel arm resonator p1 is different from that of the series armresonators s1 and s2, a return loss is large near about 2.69 GHz, andpreferably kept close to 0 dB, by way of example. On the other hand, inComparative Example 2, since the piezoelectric material of the parallelarm resonator p1 is the same as or similar to that of the series armresonators s1 and s2, a return loss is, by way of example, as small asabout −3 dB near about 2.69 GHz, and it departs away from 0 dB. Such aresult is affected by generation of the unwanted wave.

As described above, the loss in the pass band of the filter 10 is ableto be significantly reduced by including different piezoelectricmaterials as the piezoelectric layers that are included in the parallelarm resonator p1 and the series arm resonators s1 and s2.

For the substrates including the piezoelectric layers that are includedin the series arm resonators s1 and s2 and the parallel arm resonatorp1, a similar effect to that described above is also able to be providedby setting cut angles of the piezoelectric layers to be different fromeach other. More specifically, in the case where the cut angles are thesame or substantially the same, an unwanted wave is generated due to thecut angles and the loss in the passband of the filter is increased incomparison with the case where the cut angles are different. However,the loss in the passband of the filter is able to be significantlyreduced by setting the cut angles to be different from each other.

In the filter 10 (a filter device) according to the first preferredembodiment, as described above, the two series arm resonators s1 and s2and the inductor L1 (a first inductor) define the LC resonant circuit 12with the wide pass band. Furthermore, the respective anti-resonantfrequencies of the two series arm resonators s1 and s2 and the resonantfrequency of the parallel arm resonator p1 are located in the pass bandof the LC resonant circuit 12, and the individual resonators operate asnotch filters and locally attenuate the pass band of the LC resonantcircuit 12. On that occasion, since the respective anti-resonantfrequencies of the two series arm resonators s1 and s2 are higher thanthe resonant frequency of the parallel arm resonator p1, the parallelarm resonator p1 provides the attenuation slope on the lower frequencyside of the pass band of the filter 10, and the two series armresonators s1 and s2 provide the attenuation slope on the higherfrequency side of the pass band thereof. Accordingly, the pass band ofthe filter 10 is able to be widened by setting the respectiveanti-resonant frequencies of the two series arm resonators s1 and s2 andthe resonant frequency of the parallel arm resonator p1 farther awayfrom each other. Moreover, the loss in the relevant pass band is able tobe significantly reduced with adjustment using the matching circuit 14.As a result, the bandpass-type filter characteristics of the wide passband and the smaller loss are able to be provided.

Since the resonant frequency of the LC resonant circuit is lower thanthe resonant frequency of the parallel arm resonator p1, the attenuationband on the lower frequency side of the pass band of the filter 10 isable to be widened, and the attenuation on that lower frequency side isable to be increased.

Moreover, depending on the circuitry of the matching circuit 14, thematching circuit 14 are able to define and function as, for example, afilter attenuating the low band (about 699 MHz to about 960 MHz), or asa filter attenuating a frequency band of about 5 GHz.

In addition, the loss in the pass band of the filter 10 is able to besignificantly reduced by setting, in the substrates including thepiezoelectric layers that are included in the series arm resonators s1and s2 and the parallel arm resonator p1, the piezoelectric materials orthe cut angles of the piezoelectric layers to be different from eachother.

Second Preferred Embodiment

The filter 10 described in the first preferred embodiment is able to beapplied to a multiplexer, a high frequency front-end circuit, acommunication device, and the like. A second preferred embodiment of thepresent invention is described primarily with respect to a multiplexerthat includes a plurality of filters including, as at least one of theplurality of filters, the filter 10 described in the first preferredembodiment. In the relevant multiplexer, input terminals or outputterminals of the plurality of filters are directly or indirectlyelectrically connected to a common terminal.

FIG. 11 is a block diagram of a multiplexer 40 according to the secondpreferred embodiment and a peripheral circuit thereof. FIG. 11 shows notonly a high frequency front-end circuit 70 including the multiplexer 40,but also an antenna element ANT and an RF signal processing circuit(RFIC) 80. The high frequency front-end circuit 70 and the RFIC 80define a communication device 90. The antenna element ANT, the highfrequency front-end circuit 70, and the RFIC 80 are arranged, forexample, in a front end portion of a multi-mode/multi-band cellularphone.

The antenna element ANT is, for example, a multi-band antenna thattransmits and receives high frequency signals, and that is preferablyable to transmit and receive signals in accordance with communicationstandards, such as LTE. The antenna element ANT may not be able totransmit and/or receive all bands of the communication device 90 in somecases, or may be able to transmit and/or receive only for a band of alower frequency band group or a higher frequency band group in othercases, for example. Furthermore, the antenna element ANT may be includedin the communication device 90, for example.

The high frequency front-end circuit 70 is a circuit that transfers ahigh frequency signal between the antenna element ANT and the RFIC 80.More specifically, the high frequency front-end circuit 70 transfers ahigh frequency signal received by the antenna element ANT (i.e., areceived high-frequency signal) to the RFIC 80 via a reception-sidesignal path.

The high frequency front-end circuit 70 includes the multiplexer 40, aswitch 50, and an amplifier circuit 60.

The multiplexer 40 includes three filters as a plurality of filters,including the filter 10 according to the first preferred embodiment, afilter 20, and a diplexer 30. The multiplexer 40 is able to be provided,by way of example, for CA in which signals in a plurality of frequencybands corresponding respectively to the plurality of filters aretransmitted and received at the same or substantially the same time. Thefilter 20 is a band elimination filter in this preferred embodiment.Thus, the filter 20 is another filter with respect to the filter 10 andis defined by a surface acoustic wave resonator, for example. Thediplexer 30 includes a high-pass filter 30A and a low-pass filter 30B (alow band filter), and these filters are each defined by an LC filter,for example. Terminals at respective one ends of the high-pass filter30A and the low-pass filter 30B are joined into one common terminal thatis then electrically connected to the antenna element ANT. The filter 20is electrically connected to the input/output terminal 11 m to which thefilter 10 is electrically connected. In other words, terminals atrespective one ends of the filter 10 and the filter 20 are joined intoone common terminal, i.e., the input/output terminal 11 m, which is thenelectrically connected to a terminal at the other end of the high-passfilter 30A. With the individual filters of the multiplexer 40 beingelectrically connected as described above, the multiplexer 40 is atriplexer.

A pass band of the low-pass filter 30B is assigned, for example, to thelow band (about 699 MHz to about 960 MHz), and a pass band of thehigh-pass filter 30A is assigned, for example, to at least the middleband and the high band (about 1710 MHz to about 2690 MHz).

The pass band of the filter 10 is assigned, for example, to the highband (about 2300 MHz to about 2690 MHz). Frequencies of a pass band ofthe filter 20 are different from frequencies of a pass band of thefilter 10, and the pass band of the filter 20 is assigned, for example,to the middle band (about 1710 MHz to about 2200 MHz). Morespecifically, the pass band of the filter 10 and the pass band of thefilter 20 are different from each other in such a fashion that thefilter 20 (a band elimination filter) provides an attenuation bandoverlapping the pass band of the filter 10, and that the pass band ofthe filter 20 is located on the lower frequency side than the aboveattenuation band. Thus, the attenuation band of the filter 20 is locatedin the high band (about 2300 MHz to about 2690 MHz) that is the same orsubstantially the same as the pass band of the filter 10, and the passband of the filter 20 is located in the middle band (about 1710 MHz toabout 2200 MHz) that is portion of the pass band (about 1710 MHz toabout 2690 MHz) of the high-pass filter 30A, the portion being locatedon the lower frequency side than the high band (about 2300 MHz to about2690 MHz).

According to the multiplexer 40, filter characteristics with a smallerloss are able to be provided by including the filter 10 as describedabove.

The terminal at the other end of the low-pass filter 30B, the terminalat the other end of the filter 10, and the terminal at the other end ofthe filter 20 are individually electrically connected to the switch 50.

The switch 50 is electrically connected to the multiplexer 40, and itselectively connects signal paths corresponding to a plurality of bands(i.e., the low band, the middle band, and the high band), which includedifferent frequency bands from one another, to the amplifier circuit 60in accordance with a control signal from a controller (not shown).

The amplifier circuit 60 is, for example, a low noise amplifier that iselectrically connected to the multiplexer 40 via the switch 50, and thatamplifies power of the received high-frequency signal received by theantenna element ANT.

The RFIC 80 is an RF signal processing circuit that processes the highfrequency signals transmitted from and received by the antenna elementANT. More specifically, the RFIC 80 performs signal processing, such asdown-conversion, of the high frequency signal (i.e., the receivedhigh-frequency signal) input from the antenna element ANT via thereception-side signal path of the high frequency front-end circuit 70,and outputs the received signal produced after the signal processing toa base-band signal processing circuit (not shown).

Bandpass characteristics of the signal paths corresponding to theplurality of bands (i.e., the low band, the middle band, and the highband), which include different frequency bands from one another, in themultiplexer 40 are described below.

FIG. 12A is a graph showing the bandpass characteristics of the signalpath corresponding to the high band in the multiplexer 40 according tothe second preferred embodiment. FIG. 12B is a graph showing thebandpass characteristics of the signal path corresponding to the middleband in the multiplexer 40 according to the second preferred embodiment.FIG. 12C is a graph showing the bandpass characteristics of the signalpath corresponding to the low band in the multiplexer 40 according tothe second preferred embodiment. The signal path corresponding to thehigh band is a signal path passing through the high-pass filter 30A andthe filter 10. The signal path corresponding to the middle band is asignal path passing through the high-pass filter 30A and the filter 20.The signal path corresponding to the low band is a signal path passingthrough the low-pass filter 30B.

As shown in FIGS. 12A and 12B, a pass band of the signal pathcorresponding to the high band and an attenuation band of the signalpath corresponding to the middle band are overlapped with each other inabout 2300 MHz to about 2690 MHz. It is also shown in FIGS. 12A and 12Bthat the resonant frequency of the LC resonant circuit 12 in the filter10 is located in the pass band of the filter 20, and hence that anattenuation band of the signal path corresponding to the high band and apass band of the signal path corresponding to the middle band areoverlapped with each other in about 1710 MHz to about 2200 MHz, forexample. The resonant frequency of the LC resonant circuit 12 is locatednear a center frequency of the pass band of the filter 20. Preferably,the resonant frequency of the LC resonant circuit 12 is located on thelower frequency side than the center frequency of the pass band of thefilter 20. With such setting, the resonant point of the LC resonantcircuit 12 is located far away from the pass band of the filter 10.Accordingly, the pass band of the filter 10 is less affected by theresonant point of the LC resonant circuit 12, and the loss in the passband of the filter 10 is able to be significantly reduced.

As shown in FIG. 12C, a pass band of the signal path corresponding tothe low band includes a different frequency range from the pass band ofthe signal path corresponding to the high band and from the pass band ofthe signal path corresponding to the middle band, and an attenuationband of that signal band on the higher frequency side than the pass bandof the signal path corresponding to the low band is overlapped with boththe pass band of the signal path corresponding to the high band and thepass band of the signal path corresponding to the middle band.

Thus, in the multiplexer 40, the pass band of the signal pathcorresponding to the high band is located outside the respective passbands of the signal paths corresponding to the middle band and the lowband, the pass band of the signal path corresponding to the middle bandis located outside the respective pass bands of the signal pathscorresponding to the high band and the low band, and the pass band ofthe signal path corresponding to the low band is located outside therespective pass bands of the signal paths corresponding to the high bandand the middle band. As a result, the multiplexer 40 is able to beprovided for the CA in which signals in a plurality of frequency bandsare transmitted and received at the same or substantially the same time.

Other Preferred Embodiments

While the filter devices and the multiplexers according to the preferredembodiments of the present invention have been described above withrespect to the first and second preferred embodiments, the presentinvention is not limited to the above preferred embodiments. The presentinvention further includes other preferred embodiments provided byoptionally combining the elements in the above preferred embodiments,and modifications provided by variously modifying, on the basis of ideasconceived by those skilled in the art, the above preferred embodimentswithin the scope not departing from the gist of the present invention,as well as various devices including the filter device and themultiplexer according to the preferred embodiments of the presentinvention.

For example, not only the high frequency front-end circuit 70, but alsothe communication device 90 including the high frequency front-endcircuit 70 and the RFIC 80 (an RF signal processing circuit) are furtherincluded in the scope of the present invention.

As another example, while the filter 10 preferably includes two seriesarm resonators s1 and s2 in the above preferred embodiments, the filter10 may include three or more series arm resonators, for example.

As still another example, while the filter 10 preferably includes oneparallel arm resonator p1 in the above preferred embodiments, the filter10 may include two or more parallel arm resonators.

As still another example, while the high frequency front-end circuit 70preferably includes the reception-side signal path in the secondpreferred embodiment, the high frequency front-end circuit 70 mayinclude a transmission-side signal path and may transfer a highfrequency signal output from the RFIC 80 (i.e., a transmittedhigh-frequency signal) to the antenna element ANT via thetransmission-side signal path. In that case, the RFIC 80 may performsignal processing, for example, up-conversion, of the transmitted signalinput from the base-band signal processing circuit, and may output thetransmitted signal (i.e., the transmitted high-frequency signal)produced after the signal processing to the transmission-side signalpath of the high frequency front-end circuit 70. The amplifier circuit60 may be a power amplifier that amplifies power of the transmittedhigh-frequency signal output from the RFIC 80, for example.

As still another example, while the multiplexer 40 preferably is atriplexer including three filters in the second preferred embodiment,the multiplexer 40 may be a diplexer including two filters, a quadplexerincluding four filters, or the like insofar as including the filter 10.

As still another example, while the high frequency front-end circuit 70includes one switch 50 and one amplifier circuit 60 in the secondpreferred embodiment, the high frequency front-end circuit 70 mayinclude a plurality of switches and a plurality of amplifier circuits.Alternatively, the high frequency front-end circuit 70 may includeneither the switch 50 nor the amplifier circuit 60, for example.

Preferred embodiments of the present invention are able to beimplemented as filters, multiplexers, front-end circuits, andcommunication devices, which are able to be included in a multi-bandsystem, and are able to be widely applied to communication devices suchas cellular phones.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A filter device comprising: a first series armresonator and a second series arm resonator electrically connected inseries between a first terminal and a second terminal, the first seriesarm resonator being located on a side closer to the first terminal, thesecond series arm resonator being located on a side closer to the secondterminal; a parallel arm resonator electrically connected between aground and a series arm between the first series arm resonator and thesecond series arm resonator; a first inductor electrically connected inparallel to the first series arm resonator and the second series armresonator; and a matching circuit electrically connected between thesecond series arm resonator and the second terminal or between the firstseries arm resonator and the first terminal; wherein the first seriesarm resonator, the second series arm resonator, and the parallel armresonator define a pass band of a bandpass filter; the first series armresonator, the second series arm resonator, and the first inductordefine an LC resonant circuit; respective anti-resonant frequencies ofeach of the first series arm resonator and the second series armresonator and a resonant frequency of the parallel arm resonator arelocated in a pass band of the LC resonant circuit; and a resonantfrequency of the LC resonant circuit is lower than the resonantfrequency of the parallel arm resonator.
 2. The filter device accordingto claim 1, wherein the resonant frequency of the parallel arm resonatoris lower than the respective anti-resonant frequencies of each of thefirst series arm resonator and the second series arm resonator.
 3. Thefilter device according to claim 1, wherein the matching circuit is asecond inductor electrically connected between the ground and a junctionbetween the first terminal and the second terminal.
 4. The filter deviceaccording to claim 1, wherein the matching circuit is a third inductorelectrically connected in series between the first terminal and thesecond terminal.
 5. The filter device according to claim 1, wherein:each of the parallel arm resonator, the first series arm resonator, andthe second series arm resonator includes a substrate including apiezoelectric layer, and an IDT electrode provided on the substrate; anda piezoelectric material of the piezoelectric layer included in theparallel arm resonator is different from a piezoelectric material ofeach of the piezoelectric layers included in the first series armresonator and the second series arm resonator.
 6. The filter deviceaccording to claim 1, wherein: each of the parallel arm resonator, thefirst series arm resonator, and the second series arm resonator includesa substrate including a piezoelectric layer, and an IDT electrodeprovided on the substrate; and a cut angle of the piezoelectric layerincluded in the parallel arm resonator is different from a cut angle ofeach of the piezoelectric layers included in the first series armresonator and the second series arm resonator.
 7. The filter deviceaccording to claim 1, wherein at least one of the parallel armresonator, the first series arm resonator, and the second series armresonator is a Bulk Acoustic Wave resonator or a Film Bulk AcousticResonator.
 8. A multiplexer comprising: a plurality of filters thatinclude, as at least one among the plurality of filters, the filterdevice according to claim 1; wherein input terminals or output terminalsof the plurality of filters are directly or indirectly electricallyconnected to a common terminal.
 9. The multiplexer according to claim 8,wherein the plurality of filters includes two filters.
 10. Themultiplexer according to claim 8, wherein the plurality of filtersincludes three filters.
 11. The multiplexer according to claim 8,wherein the plurality of filters includes four filters.
 12. Themultiplexer according to claim 8, wherein: the plurality of filtersinclude an other filter different from the filter device; the otherfilter is electrically connected to the first terminal; a pass band ofthe other filter include different frequencies from the pass band of thebandpass filter; and the resonant frequency of the LC resonant circuitis located in the pass band of the other filter.
 13. The multiplexeraccording to claim 12, wherein the resonant frequency of the LC resonantcircuit is located on a lower frequency side than a center frequency ofthe pass band of the other filter.
 14. The multiplexer according toclaim 12, wherein: the pass band of the filter device is about 2300 MHzto about 2690 MHz; and the pass band of the other filter is about 1710MHz to about 2200 MHz.
 15. The multiplexer according to claim 8, whereinthe plurality of filters includes a low-band filter.
 16. The multiplexeraccording to claim 15, wherein a pass band of the low-band filter isabout 699 MHz to about 960 MHz.
 17. The multiplexer according to claim15, wherein the low-band filter is an LC filter.
 18. The multiplexeraccording to claim 8, wherein the multiplexer transmits and receivessignals in a plurality of frequency bands corresponding to the pluralityof filters at a same or substantially a same time.
 19. A high frequencyfront-end circuit comprising: the multiplexer according to claim 8; anda switch electrically connected to the multiplexer.
 20. A high frequencyfront-end circuit comprising: the multiplexer according to claim 8; andan amplifier circuit electrically connected to the multiplexer.
 21. Acommunication device comprising: an RF signal processing circuit thatprocesses high frequency signals transmitted from and received by anantenna element; and the high frequency front-end circuit according toclaim 19, which transfers the high frequency signals between the antennaelement and the RF signal processing circuit.